| PART |
Description |
Maker |
| CSD882P CSD882R CSD882 CSD882E CSD882Q |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB772P
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSB772R
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB772Q
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSB772E
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSB772
Audio Frequency Power Amplifier and Low Speed Switching Applications
|
CDIL[Continental Device India Limited]
|
| SSF4606-15 |
30V Complementary MOSFET
|
GOOD-ARK Electronics
|
| SSF4604-15 |
30V Complementary MOSFET
|
GOOD-ARK Electronics
|
| AON3611 |
30V Complementary MOSFET
|
ShenZhen FreesCale Electronics. Co., Ltd
|
| AO4606 AO460612 |
30V Complementary MOSFET
|
Alpha & Omega Semiconductors
|
| AO660211 |
30V Complementary MOSFET
|
Alpha & Omega Semiconductors
|
| SI4542DY SI4542D SI4542 |
30V Complementary PowerTrench MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| WFS5HB03N8 |
30V SO8 Complementary enhancementmode MOSFET H-Bridge
|
Shenzhen Winsemi Microelectronics Co., Ltd
|
| ZXMC3AMC ZXMC3AMCTA |
30V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
|
Diodes Incorporated
|
| AO4616-11 |
30V Complementary MOSFET
|
Alpha & Omega Semicondu...
|
| MJE182 MJE171 MJE181 MJE172 ON2017 MOTOROLAINC-MJE |
POWER TRANSISTORS COMPLEMENTARY SILICON 3 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-225AA
From old datasheet system
COMPLEMENTARY SLLLCON PLASTLC POWER TRANSLSTORS
3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60-80 VOLTS 12.5 WATTS
|
MOTOROLA[Motorola, Inc]
ONSEMI[ON Semiconductor]
|
